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机译:优化生长石墨烯的SiC:从动态翻转机制
Univ Missouri, Dept Chem, Kansas City, MO 64110 USA;
Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China;
Cent S Univ, Hunan Key Lab Super Microstruct & Ultrafast Proc, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R ChinaNatl Univ Singapore, Dept Phys, Singapore 117542, Singapore;
Energy costs; thermal dissociation; grapheneFliptransient processessingle crystalsthermal degradationab initio calculations;
机译:Growth and Convergence in a Multiregional Model with Space–Time Dynamics. 多区域时空动态模型的增长与收敛
机译:SIC上的混合inse / Monolayer Graphene的MagnetOcransport
机译:WSE2 / Graphene-SiC接口中的电荷转移和带电缺陷
机译:The growth of a polycrystalline graphene from a liquid phase.
机译:Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum