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Towards a general growth model for graphene CVD on transition metal catalysts

机译:对一般的增长模式对石墨烯化学汽相淀积过渡金属催化剂

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摘要

The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behaviour on these most commonly used catalyst materials, and it is shown that kinetic aspects such as carbon permeation have to be taken into account. Key CVD process parameters are discussed in this context and the results are anticipated to be highly useful for the design of future strategies for integrated graphene manufacture.
机译:石墨烯的化学气相沉积(CVD)在三个多晶过渡金属催化剂、Co、镍和铜、系统而和一阶增长模型提出了可作为参考在任何元素或优化石墨烯增长合金催化剂体系。碳溶解性的考虑捕捉甚至基本增长不足行为在这些最常用的催化剂材料,结果表明,动力学方面如碳渗透进入帐户。在这种情况下,结果是预期对未来的设计是非常有用的策略集成制造石墨烯。

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