Temperature Impact on Reliability and Manufacturing of Embedded HfO_x-Based RRAM: a Novel Pre-coding Method for Bypassing Soldering Reflow

摘要

This paper proposes a novel pre-coding method that enables bypassing the soldering reflow issue in resistive memory devices called RRAM. This method is based on the difference between forming and set voltages distributions to discriminate virgin memory cells from those in which data were pre-coded before the soldering step. This procedure enables data recovery through the application of a voltage pulse over the whole memory array. This method, demonstrated on bipolar HfO2-based resistive elements, can be extended to all RRAM devices that exhibit a significant margin between forming and set voltages distributions.