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首页> 外文期刊>IEEE Transactions on Components, Packaging, and Manufacturing Technology. Part A >Arc restrikes yielding back-commutations in the contact gap of low voltage interrupters
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Arc restrikes yielding back-commutations in the contact gap of low voltage interrupters

机译:再打弧产生back-commutations有限公司接触的低压开关管

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Arc commutation from the arc chute back into the contact gap of a low voltage circuit-breaker caused by a high arc voltage pulse due to arc splitting was investigated in a model interrupter with the aid of a synthetic test method. In the experiment a well defined time after the arc left the contacts a high voltage ramp was applied across the contact gap. The criterion considered was the breakdown value of the voltage. Recovery time (in the range of 500 /spl mu/s to 2 ms), geometry and materials of contacts (Cu, Ag/C, Ag/Ni, Ag/MeO) and walls (nongassing and gassing) were varied. Increasing recovery time increased the breakdown voltage significantly due to the decrease of the temperature in the contact area. The minimum breakdown value corresponded to the instantaneous reignition voltage. An increase of the wall distance caused an insignificant increase of the breakdown voltage due to the decrease of field distortion. Gassing wall materials caused slightly higher breakdown voltages than nongassing walls. Increasing contact gap from 2 mm to 4 mm increased the breakdown voltage. No influence was observed at lower (1.5 mm) and at higher contact gaps up to 7 mm. The influence of the contact material was generally little; Cu contacts yielded insubstantially lower breakdown voltages than the other contact materials investigated.
机译:电弧弧槽回减刑低压断路器的接触差距造成高由于电弧弧电压脉冲分裂了断续器的模型借助合成试验方法。实验时间定义良好的弧后离开了联系人应用高电压斜坡在接触的差距。是价值的击穿电压。时间(在500 / splμ2 ms / s),接触几何和材料(铜、Ag / C、Ag / Ni Ag / MeO)和墙壁(nongassing和气体处理)是不同的。击穿电压明显由于降低温度的接触面积。最小值对应于破裂瞬时重燃电压。墙的距离造成了无关紧要的击穿电压的增加造成的减少失真。材料略高的故障引起的电压比nongassing墙壁。接触差距从2毫米到4毫米增加了击穿电压。低(1.5毫米)和高接触间隙7毫米。触点材料的影响通常小;脆弱的击穿电压低于其他接触材料调查。

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