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Influence of Crystal Growth Conditions on Formation of Macroscopic Inclusions inside Thiourea Crystals

机译:晶体生长条件对硫脲晶体内宏观夹杂物形成的影响

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摘要

Macroscopic inclusion is an influential defect which affects purity of crystals during crystallization and remains not fully understood. In this work, we chose thiourea as the model material to investigate inclusion formation in detail. Recrystallization of thiourea were performed in deionized water, ethylene glycol, methanol, ethanol, n-propanol, and n-butanol under various temperature and supersaturation via cooling or evaporative modes. A series of plate-like inclusions could form and be parallel to specific crystal faces. Polar solvent was found to be promotive to the inclusion formation due to the enhancing solute-solvent interaction. The effect of supersaturation on inclusion formation was found to be complicated. A supersaturation window was found in which increasing supersaturation can stimulate forming inclusions. Under the lower threshold of the window, inclusion can seldom form due to low crystal growth. Beyond the upper threshold, however, inclusion formation also decreased. This supersaturation effect was explained using the “hunger center” mechanism in which the growth rate difference between the corners/edges and the center part of crystal face was considered. Moreover, a 4-stage process during inclusion formation in batch crystallization was also discussed.
机译:宏观包容是一种影响的缺陷,它会影响结晶过程中晶体的纯度,并且尚未完全理解。在这项工作中,我们选择了Thiourea作为模型材料来详细研究包容形成。在各种温度下,通过冷却或蒸发模式在各种温度和过饱和的情况下,在去离子水,乙二醇,甲醇,乙醇,N-丙醇和N-丁醇中重结晶。一系列板状夹杂物可能形成并平行于特定的晶体面。由于增强的溶质 - 溶剂相互作用,发现极性溶剂可促进纳入形成。发现过饱和对纳入形成的影响很复杂。发现了一个过饱和窗口,其中增加过饱和可以刺激形成夹杂物。在窗户的较低阈值下,由于低晶体生长,很少会形成包含。然而,超出上阈值,纳入形成也减少了。使用“饥饿中心”机制来解释这种过饱和效应,其中考虑了角/边缘和晶体面中心部分之间的生长速率差异。此外,还讨论了在批处理结晶中纳入过程中的四阶段过程。

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