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首页> 外文期刊>Chemistry Select >Design and Synthesis of p-n Conversion Indium-Oxide-Based Gas Sensor with High Sensitivity to NO_x at Room-Temperature
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Design and Synthesis of p-n Conversion Indium-Oxide-Based Gas Sensor with High Sensitivity to NO_x at Room-Temperature

机译:P-N转换基于二氧化物的气体传感器的设计和合成,对室温下NO_X的灵敏度高

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摘要

Indium oxide (In2O3) nanoparticles with internal porous structure were obtained through thermal treatment of the hydrothermally synthesized indium hydroxide (In(OH)3) nanocubes precursor. The structure and morphology of In2O3 were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM). The fresh In2O3 exhibits p-type conductivity according to gas response testing. However, the fresh In2O3 allowed switchable p- to n- conductivity after it was induced by high concentration NO_x and the induced In2O3 sensor (IIS) exhibited excellent sensing performances in terms of high response, enhanced selectivity and good stability to NO_x at room temperature. From the characterization of XPS, it was found that a large amount of oxygen adsorbed on the surface of indium oxide, which led to the n-p type surface conductivity conversion of In2O3. The formation of adsorbed species of high concentration NO_x induced In2O3 transition from p- to n- type surface conduction was investigated by in situ Diffuse Reflectance Infrared Transform Spectroscopy (DRIFT). The present work not only offers a strategy to change the type of electrical conductivity of the material, but also offers an opportunity to deeply understand the mechanism of n-p-n type electrical surface conductivity conversion.
机译:通过热处理水热合成氢氧化淀粉(IN(OH)3)纳米管前体,获得了具有内部多孔结构的氧化氧化纳米颗粒。 In2O3的结构和形态通过X射线衍射(XRD),透射电子显微镜(TEM)表征。根据气体响应测试,新鲜的IN2O3表现出P型电导率。但是,新鲜的IN2O3允许高浓度NO_X诱导后可切换的P-到N电导率,而诱导的In2O3传感器(IIS)在室温下对NO_X的高响应,增强的选择性和良好的稳定性在室温下表现出出色的传感性能。从XPS的表征中,发现大量氧气吸附在氧化酰基表面,从而导致N-P型表面电导率转化为In2O3。通过原位弥散反射红外转化光谱法(漂移)研究了高浓度NO_X NO_X NO_X诱导的高浓度的吸附物种。目前的工作不仅提供了改变材料电导率类型的策略,而且还提供了一个机会,可以深入了解N-P-N型电面电导率转换的机理。

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