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Graphene nanoribbon band-gap expansion: Broken-bond-induced edge strain and quantum entrapment

机译:石墨烯纳米替比型带隙扩展:断键诱导的边缘应变和量子置换

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摘要

An edge-modified tight-binding (TB) approximation has been developed, enabling us to clarify the energetic origin of the width-dependent band gap (E_G) expansion of the armchaired and the reconstructed zigzag-edged graphene nanoribbons with and without hydrogen termination. Consistency between the TB and the density-function theory calculations affirmed that: (i) the E_G expansion originates from the Hamiltonian perturbation due to the shorter and stronger bonds between undercoordinated atoms, (ii) the combination of the edge-to-width ratio with a local bond strain up to 30% and the associated 152% potential well depression determines the width dependent E_G change; and, (iii) hydrogen termination affects insignificantly the band gap width as the H-passivation minimizes the midgap impurity states.
机译:已经开发了边缘修饰的紧密结合(TB)近似值,使我们能够阐明扶手椅的宽度依赖性带隙(E_G)扩展的能量起源,并在没有氢终止的情况下和无氢终止的情况下阐明了辅助的锯齿形的曲折边缘边缘纳米替烯。 结核病与密度功能理论计算之间的一致性确认:(i)E_G扩展源于汉密尔顿的扰动,这是由于不符合的原子之间的较短和较强的键,(ii)与边缘到宽度比的组合, 局部粘结应变高达30%,相关的152%潜在的井抑制决定了宽度依赖性E_G的变化; 并且(iii)氢终止会影响带隙的宽度无关紧要,因为H-抑制可最大程度地减少MIDGAP杂质状态。

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  • 来源
    《Nanoscale》 |2010年第10期|2160-2163|共4页
  • 作者单位

    Advanced Photonics and Plasmonics Division, Institute of High Performance Computing, A*STAR, Singapore 138632;

    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798;

    Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan;

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  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

    graphene; Nanobelts; Band gapGAP WIDTHDensity functions;

    机译:石墨烯;纳米带;从广泛函数的带;

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