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首页> 外文期刊>Nanoscale >TiO2 nanotube (T_NT) surface treatment revisited: Implications of ZnO, TiCI4, and H2O2 treatment on the photoelectrochemical properties of T_NT and T_NT-CdSe
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TiO2 nanotube (T_NT) surface treatment revisited: Implications of ZnO, TiCI4, and H2O2 treatment on the photoelectrochemical properties of T_NT and T_NT-CdSe

机译:TIO2纳米管(T_NT)进行表面处理:ZnO,TICI4和H2O2处理对T_NT和T_NT-CDSE的光电化学特性的含义

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The surface treatment of an anodized TiO2 nanotube (T_NT) is very desirable for enhancing its photoelectrochemical properties and often is a prerequisite to deposition of any overlying layer for photoactivity efficiency improvement. This study provides a comparative analysis of the effects of such surface treatments and the mechanistic insights behind the observed improvements in the performance of the treated T_NTs. T_NT surface treatment using three approaches, viz., TiCI4, Zn(IMH3)4~(2+), and H2O2 is examined. TiCI4 and Zn(NH3)4~(2+) treatment results in the formation of discontinuous islands of the respective oxides with 5-10 nm and 15-20 nm diameter particles. TiCI4 treatment demonstrates an increase of 7.4% in photovoltage and is the most effective of the three approaches. Zn(NH3)4~(2+) treatment also results in an ~2% increase in photovoltage. However, a surface treatment of T_NT using H2O2 results only in a favourable shift in flatband potential (80 mV). The TJMTs are rendered ineffective as H2O2 treatment causes the destabilization of the T_NT at the base. Finally, the activity of an overlying chalcogenide layer is improved with the TiCI4 and Zn(NH3)4~(2+) treatment (and not with H2O2) as evident from the photoelectrochemical responses: (J_(T_NT-TiO2-CdSe) > J_(T_NT-ZnO-CdSe) > J_(T_NT-CdSe) > J_(T_NT-H2O2-CdSe)).
机译:阳极氧化TIO2纳米管(T_NT)的表面处理对于增强其光电化学特性非常需要,并且通常是沉积任何上层层以提高光敏效率的先决条件。这项研究提供了对此类表面处理的影响以及观察到的治疗T_NT性能改善背后的机械见解的比较分析。使用三种方法,即TICI4,Zn(IMH3)4〜(2+)和H2O2进行T_NT表面处理。 TICI4和Zn(NH3)4〜(2+)处理导致形成具有5-10 nm和15-20 nm直径颗粒的各个氧化物的不连续岛。 TICI4治疗表现出7.4%的光伏将增加,并且是三种方法中最有效的。 Zn(NH3)4〜(2+)的处理也导致光伏增加约2%。但是,使用H2O2对T_NT进行表面处理仅导致平板电位的有利移动(80 mV)。由于H2O2处理会导致T_NT在基础上的不稳定,因此TJMT的效率无效。最后,通过TICI4和Zn(NH3)4〜(2+)处理(而不是H2O2),可以改善上覆硫代化的层的活性,从光电学化学响应中可以明显看出:( j_(t_nt-tio2-cdse)> j_ (t_nt-zno-cdse)> j_(t_nt-cdse)> j_(t_nt-h2O2-cdse))。

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