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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >P-type transparent conducting characteristics of delafossite Ca doped CuScO2 prepared by hydrothermal synthesis dagger
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P-type transparent conducting characteristics of delafossite Ca doped CuScO2 prepared by hydrothermal synthesis dagger

机译:通过水热合成匕首制备的Delafossite Ca掺杂Cusco2的p型透明导电特性

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摘要

Ca doped CuScO2 (CSO) delafossite oxides of 3-4 mu m were synthesized through the hydrothermal method using Cu(NO3)(2)center dot 3H(2)O, Sc(NO3)3 center dot xH(2)O as the precursor at 240 degrees C for 24 h in this work. The influence of the process parameters (reaction temperature, Cu/Sc molar ratios, EG (ethylene glycol) quantity, NaOH mineralizer, reactant concentration) on the structure and morphology of CSO was studied systematically. The crystal structure, morphology, and chemical composition of these Ca doped CSO (0, 1 at%, 3 at%, and 5 at%) sheets were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). With increasing Ca dopant, the Ca doped CSO sheets become much thinner; the thickness decreased from 568 nm (CSO) to 190 nm (3 at% Ca doped CSO). Moreover, the conductivity of Ca doped CSO sheets decreased with increasing Ca dopant. The CSO powders (19.91 S m(-1)) have higher conductivity than Ca doped CSO sheets (9.89, 15.69, and 16.51 S m(-1)) at room temperature. All these CSO based samples exhibit a weak absorption ability with the absorptance around 20-40% in the visible light region (400-780 nm). The optical band gap values exhibited a blue shift with increasing Ca dopant. The calculated band gaps of Ca-doped CSO sheets are 3.88 eV, 3.91 eV, 3.90 eV and 3.93 eV, respectively. This result indicates that all these CSO based samples have potential applications as p-type transparent materials in optoelectronic devices, owing to their comparable optical transmittance in the UV-vis region.
机译:本工作以Cu(NO3)(2)中心点3H(2)O,Sc(NO3)3中心点xH(2)O为前驱体,在240℃下,通过水热法合成了3-4μm的Ca掺杂CuScO2(CSO)铁氧体氧化物。系统研究了反应温度、Cu/Sc摩尔比、乙二醇用量、NaOH矿化剂、反应物浓度等工艺参数对CSO结构和形貌的影响。通过X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)分析了这些掺钙CSO(0、1at%、3at%和5at%)片的晶体结构、形貌和化学成分。随着Ca掺杂量的增加,Ca掺杂的CSO片变薄;厚度从568nm(CSO)降至190nm(3at%Ca掺杂CSO)。此外,随着Ca掺杂量的增加,Ca掺杂CSO片的电导率降低。在室温下,CSO粉末(19.91μm(-1))比掺钙CSO片材(9.89、15.69和16.51μm(-1))具有更高的电导率。所有这些CSO基样品都表现出弱吸收能力,在可见光区域(400-780 nm)的吸收率约为20-40%。随着Ca掺杂量的增加,光学带隙值出现蓝移。计算得到掺钙CSO片的带隙分别为3.88ev、3.91ev、3.90ev和3.93ev。这一结果表明,所有这些CSO基样品由于其在紫外-可见区的光学透过率相当,因此在光电子器件中作为p型透明材料具有潜在的应用前景。

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    Wuhan Univ Technol State Key Lab Silicate Mat Architectures Wuhan 430070 Peoples R China;

    Zhejiang Kelei New Mat Co Ltd Huzhou 313300 Peoples R China;

    Wuhan Univ Technol State Key Lab Silicate Mat Architectures Wuhan 430070 Peoples R China;

    Wuhan Univ Technol State Key Lab Silicate Mat Architectures Wuhan 430070 Peoples R China;

    Wuhan Univ Technol State Key Lab Silicate Mat Architectures Wuhan 430070 Peoples R China;

    Wuhan Univ Technol State Key Lab Silicate Mat Architectures Wuhan 430070 Peoples R China;

    Wuhan Univ Technol State Key Lab Silicate Mat Architectures Wuhan 430070 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学 ; 无机化学 ;
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