Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

摘要

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) magnetron sputtering at room temperature. The RF power is varied from 75 to 150W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power. The lowest resistivity achieved is 2.07 × 10-3Ω cm at an RF power of 100W with a Hall mobility of 16cm2V-1s-1 and a carrier concentration of 1.95 × 1020 cm-3. The films obtained are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.