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首页> 外文期刊>Surface & Coatings Technology >Depositing chromium oxide film on alumina ceramics enhances the surface flashover performance in vacuum via PECVD
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Depositing chromium oxide film on alumina ceramics enhances the surface flashover performance in vacuum via PECVD

机译:在氧化铝陶瓷上沉积氧化铬薄膜通过PECVD获得真空的表面闪络性能

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Surface flashover seriously restricts the electrical performance of insulating system in vacuum. Surface properties of the insulating materials are the key factors affecting the electrical property along the surface. In this paper, Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is used to deposit chromium oxide film on alumina ceramics to improve its flashover voltage in vacuum. Chromium acetylacetonate and argon are used as the precursor and working gas, respectively. A homemade ultrasonic atomizer and gas distribution system are used to ensure the uniformity during the AP-PECVD. For comparison, deposition experiments are both carried out at atmospheric and sub-atmospheric pressures. The experimental results show that the surface flashover voltages in 10(-4) Pa are increased by 20% and 26% after the PECVD at atmospheric and sub-atmospheric pressures, respectively. The physicochemical and electrical property indicates that more shallow traps are introduced into the surface of alumina ceramics. The initial potential of the deposited sample decreases by 36% after the AP-PEVCD. Therefore, the deposition of chromium oxide films on alumina ceramics by AP-PECVD can effectively inhibit the surface charge accumulation and improve the surface flashover voltage in vacuum by reducing the trap energy level and its density. Based on the SEEA (secondary electron avalanche) theory and the distribution of the surface traps, the effects of chromium oxide films deposited on alumina ceramics are summarized for the application of vacuum insulation. The feasibility of depositing chromium oxide films to improve the vacuum surface flashover voltage of alumina ceramics by PECVD is proved. The process of the PECVD at atmospheric pressure is flexible, which provides a promising technical support for enhancing surface flashover for other insulating materials.
机译:表面闪络严重制约了真空绝缘系统的电气性能。绝缘材料的表面性质是影响其表面电性能的关键因素。本文采用常压等离子体增强化学气相沉积(AP-PECVD)技术在氧化铝陶瓷上沉积氧化铬薄膜,以提高其真空闪络电压。乙酰丙酮铬和氩气分别用作前体和工作气体。为了保证AP-PECVD过程的均匀性,采用了国产超声波雾化器和气体分配系统。为了进行比较,沉积实验都是在大气压和亚大气压下进行的。实验结果表明,在大气压和亚大气压下,PECVD后10(-4)Pa的表面闪络电压分别提高了20%和26%。物理化学和电学性质表明,氧化铝陶瓷表面引入了更多的浅陷阱。AP-PEVCD后,沉积样品的初始电位降低了36%。因此,AP-PECVD在氧化铝陶瓷上沉积氧化铬薄膜可以有效抑制表面电荷积累,通过降低陷阱能级及其密度来提高真空中的表面闪络电压。基于二次电子雪崩(SEEA)理论和表面陷阱的分布,总结了氧化铝陶瓷上沉积的氧化铬薄膜对真空绝缘应用的影响。证明了PECVD沉积氧化铬薄膜提高氧化铝陶瓷真空表面闪络电压的可行性。PECVD在大气压下的工艺是灵活的,这为增强其他绝缘材料的表面闪络提供了有希望的技术支持。

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