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Excitonic optical spectra and energy structures in a one-dimensional Mott insulator demonstrated by applying a many-body Wannier functions method to a charge model

机译:通过将许多身体卫生频率的功能方法应用于电荷模型,通过将许多身体卫生频率的功能方法应用于一维Mott绝缘体中的激发光谱和能量结构

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摘要

We applied a many-body Wannier functions method to theoretically calculate the excitonic optical conductivity spectrum and energy structure in a one-dimensional (1D) Mott insulator at absolute zero temperature with a large system size. Focusing on full charge fluctuations associated with holon and doublon pairs, we employ a charge model, which is interpreted as an effective model for investigating the photoexcitations of a 1D extended Hubbard model under a half-filling of the spin-charge separation. As a result, theoretical spectra with the appropriate broadenings qualitatively reproduce the recent experimental data of ET-F-2 TCNQ at 294 K with and without a modulated electric field. Regarding the excitonic energy structure, we found that the excitons, particularly for even-parity, are weakly bound by many-body effects. This is also consistent with the fitting parameters reported in a recent experiment. Thus, the theoretical method presented in this paper is useful for understanding the physical roles of the charge fluctuations in many-body excited states of a 1D Mott insulator.
机译:我们应用多体Wannier函数方法,从理论上计算了在绝对零温度下,大系统尺寸的一维Mott绝缘体中激子的光学电导谱和能量结构。针对与holon和doublon对有关的全电荷涨落,我们采用了一个电荷模型,该模型被解释为研究自旋电荷分离半填充下一维扩展Hubbard模型的光激发的有效模型。因此,适当加宽的理论光谱定性地再现了在294K有调制电场和没有调制电场时ET-F-2 TCNQ的最新实验数据。关于激子的能量结构,我们发现激子,特别是偶数宇称的激子,受到多体效应的弱束缚。这也与最近一次实验中报告的拟合参数一致。因此,本文提出的理论方法有助于理解一维莫特绝缘体多体激发态中电荷涨落的物理作用。

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  • 来源
    《Physical review, B》 |2021年第4期|共15页
  • 作者单位

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci 1-1 Oho Tsukuba Ibaraki 3050801 Japan;

    Grad Univ Adv Studies Inst Mat Struct Sci High Energy Accelerator Res Org KEK 1-1 Oho Tsukuba Ibaraki 3050801 Japan;

    Univ Tokyo Dept Adv Mat Sci 5-1-5 Kashiwa No Ha Chiba 2778561 Japan;

    Univ Tokyo Dept Adv Mat Sci 5-1-5 Kashiwa No Ha Chiba 2778561 Japan;

    Univ Tokyo Dept Adv Mat Sci 5-1-5 Kashiwa No Ha Chiba 2778561 Japan;

    Hokkaido Univ Fac Sci Dept Chem Sapporo Hokkaido 0600810 Japan;

    Univ Tokyo Dept Appl Phys Bunkyo Ku 7-3-1 Hongo Tokyo 1138656 Japan;

    Univ Tokyo Dept Adv Mat Sci 5-1-5 Kashiwa No Ha Chiba 2778561 Japan;

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  • 正文语种 eng
  • 中图分类 固体物理学;
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