机译:金属反应诱导的自对准顶栅无定形Imazno薄膜晶体管形成导电源 - 漏区的散装效应
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
School of Electronic and Computer Engineering Peking University;
amorphous oxide semiconductors (AOS); amorphous indium?gallium-zinc oxide (a-IGZO); metal treatment; oxidation?reduction reaction; oxygen vacancy diffusion; bulk-doping effect; thin-film transistors (TFT);
机译:自对准顶栅共面薄膜薄膜晶体管中横向载波扩散和源极漏极串联电阻的研究
机译:非晶InGaZnO薄膜晶体管源漏接触金属的比较研究
机译:非晶InGaZnO4薄膜晶体管中光诱导顶栅效应对光子通量和顶栅电压的依赖性
机译:具有亚微米通道长度的自对准顶栅无定形Ingazno薄膜晶体管的制造
机译:栅极平面化和铝栅极完全自对准的非晶硅薄膜晶体管,用于大面积和高分辨率有源矩阵液晶显示器(AMLCD)。
机译:自对准顶栅共面InGaZnO薄膜晶体管的横向载流子扩散和源漏串联电阻的研究
机译:使用并五苯和非晶InGaZnO薄膜晶体管的顶栅混合互补逆变器,具有很高的工作稳定性
机译:超柔性,不可见的薄膜晶体管,由非晶金属氧化物/聚合物沟道层混合物制成。