首页> 外文期刊>Journal of the European Ceramic Society >Multiple thermal resistance induced extremely low thermal conductivity in porous SiC-SiO2 ceramics with hierarchical porosity
【24h】

Multiple thermal resistance induced extremely low thermal conductivity in porous SiC-SiO2 ceramics with hierarchical porosity

机译:多次热阻诱导多孔SiC-SiO2陶瓷中具有分级孔隙率的极低导热率

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Maximizing interfaces for blocking heat conduction in porous ceramic structures is an efficient approach for achieving maximum thermal resistance. Here, we adopted three strategies simultaneously for maximizing thermal resistance in porous SiC-based ceramics: (1) addition of nano-sized silica into nano-sized SiC powder for generating SiC/SiO2 interfaces, (2) addition of nano-sized carbon into nano-sized SiC powder as the template, and (3) sintering in air, which leads to the partial oxidation of the nano-sized SiC particles and burn-out of nano sized carbon, giving rise to the generation of the SiC-core/SiO2-shell structure and formation of micro-, meso-, and macro-sized pores. The thermal conductivity, compressive strength, porosity, and specific compressive strength of porous SiC-SiO2 ceramics processed at 600 degrees C with the above strategies were 0.066 Wm(-1) K-1, 2.7 MPa, similar to 72 %, and 3.9 MPa.cm(3)/g, respectively.
机译:在多孔陶瓷结构中,最大化界面以阻止热传导是实现最大热阻的有效途径。在这里,我们同时采用了三种策略来最大化多孔SiC基陶瓷的热阻:(1)向纳米SiC粉末中添加纳米二氧化硅以生成SiC/SiO2界面,(2)向纳米SiC粉末中添加纳米碳作为模板,以及(3)在空气中烧结,这会导致纳米SiC颗粒的部分氧化和纳米碳的烧损,从而产生SiC核/SiO2壳结构,并形成微观、中观和宏观尺寸的孔隙。采用上述方法在600℃下处理的多孔SiC-SiO2陶瓷的热导率、抗压强度、孔隙率和比抗压强度分别为0.066 Wm(-1)K-1、2.7 MPa,与72%和3.9 MPa相似。cm(3)/g。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号