Resolving individual Shockley partials of a dissociated dislocation by STEM

摘要

A practical method was developed to image detailed features of defects in a crystal using STEM. This method is essentially a STEM version of the conventional CTEM g/3g weak beam dark field (WBDF) method. The method was successfully applied to resolving individual Shockley partials of a dissociated dislocation in a Cu-6.44at.%Al alloy.