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Strengthening effect of grain and twin boundaries in zirconium bi-crystal micropillars

机译:谷物和双界氧化锆双晶微粒中的强化效应

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摘要

In this work, the effect of crystallographic orientations and the strengthening due to grain/twin boundaries were investigated by uniaxial compression of single- and bi-crystal micropillars of pure zirconium (Zr) with >= 99.9% purity. Micropillars fabricated using focused ion beam (FIB) milling were compressed using a flat punch tip in a nanoindenter to obtain stress-strain curves for individual orientations of Zr. Only near-basal-oriented samples were deformed by multiple slip, while samples with other orientations were deformed by a single slip. Bi-crystal samples had significantly higher flow stress than single-crystal samples - the increment in flow stress arising from grain boundaries being higher than that arising from twin boundaries. Our analysis shows that while twin-boundary strengthening can be explained based on a size effect according to the Hall-Petch equation, the higher strengthening effect of grain boundaries appears to arise from a combination of a sample-size effect as well as dislocation accumulation at boundaries.
机译:在这项工作中,通过对纯度>=99.9%的纯锆(Zr)单晶和双晶微柱进行单轴压缩,研究了结晶取向和晶界/孪晶界面强化的影响。利用聚焦离子束(FIB)铣削技术制备的微柱在纳米压头中使用平冲头尖端进行压缩,以获得Zr各个取向的应力-应变曲线。只有近基底取向的样品通过多次滑移变形,而其他取向的样品通过单一滑移变形。双晶样品的流动应力明显高于单晶样品——晶界产生的流动应力增量高于孪晶产生的流动应力增量。我们的分析表明,虽然根据霍尔-佩奇方程,孪晶界强化可以基于尺寸效应来解释,但晶界的更高强化效应似乎是由样品尺寸效应和晶界处位错累积的组合引起的。

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