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Determination of Se(IV) as a 5-nitropiazselenol complex by adsorptive stripping voltammetry at an in situ plated bismuth film electrode

机译:吸附溶出伏安法在原位镀铋膜电极上测定5-硝基哌唑烯醇络合物中的硒(IV)

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摘要

In this paper a simple, selective, sensitive and reproducible stripping method based on adsorption of Se(IV) in the form of a 5-nitropiazoselenol complex at the surface of an in situ plated bismuth film electrode was introduced. All affecting parameters on adsorption, stripping and complex formation steps were evaluated and studied. Under optimum conditions the established calibration curve obeyed the linear regression equation in the range of 2 to 50 mg L-1 of Se(IV) concentrations. The estimated detection and quantification limits were 0.05 and 0.15 mg L-1 of Se(IV), respectively. In addition, the mean and RSD for determination of 5 mg L-1 of Se(IV) were calculated to be 4.91 and 2.8% (n=5). The accuracy of the method was certified by comparison of the results obtained from the proposed method and those obtained from ICP-OES as the reference method.
机译:本文介绍了一种简单,选择性,灵敏和可重复的剥离方法,该方法基于在原位镀铋膜电极表面上以5-硝基吡唑啉醇络合物形式吸附Se(IV)。对吸附,汽提和复合物形成步骤的所有影响参数进行了评估和研究。在最佳条件下,建立的校正曲线在2至50 mg L-1的Se(IV)浓度范围内符合线性回归方程。估计的检出限和定量限分别为Se(IV)的0.05和0.15 mg L-1。另外,计算出的5 mg L-1的Se(IV)的平均值和RSD计算为4.91和2.8%(n = 5)。通过比较从建议的方法获得的结果和作为参考方法的ICP​​-OES获得的结果,验证了该方法的准确性。

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