Electron spectrometry with Silicon drift detectors: a GEANT4 based method for detector response reconstruction

摘要

Precision electron spectrometry in the keV range has always been considered a challenging task. The reconstruction of the original electron energy from the detected signal is not trivial because multiple effects modify the kinetic energy of the electron along its path. If not correctly accounted for, these effects can spoil and bias the reconstructed energy with a dramatic reduction of accuracy and precision. In this paper we address one of the most critical aspects of electron spectrometry: the generally unknown effect of the detector entrance window. We show that, with a MonteCarlo-based approach, we are able to build a model of the entrance window accurate enough to reduce the negative effects due to its existence. We adopt for this purpose Silicon Drift Detectors that, thought primarily used for X-ray spectrometry, appear a promising device for electron spectrometry. The technique we discuss exploits characterization and validation measurements performed with electron beams from a Scanning Electron Microscope, later reconstructed with a GEANT4 MonteCarlo simulation.