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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Size-distribution of irradiation-induced dislocation-loops in materials used in the nuclear industry
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Size-distribution of irradiation-induced dislocation-loops in materials used in the nuclear industry

机译:核工业中材料中辐射诱导的脱位环的尺寸分布

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Neutron or proton irradiation induced dislocation loops in Zr and its alloys are usually characterized by electron microscopy methods. In plastically deformed materials X-ray line profile analysis (XLPA) is now a well-established tool to determine dislocation densities (DDs) with excellent agreement between XLPA and TEM analysis. In irradiated zirconium alloys, however, XLPA determined DDs are often considerably larger than those obtained by TEM. In ion irradiated Cu and W it was shown that X-ray diffraction or MD simulations give significantly larger dislocation loop densities than conventional TEM analysis, which suggests that the smallest loops remain undetected by TEM. Based on these results we developed a new methodology to determine power-law size-distributions of irradiation-induced dislocation loops. We as-sume that only loops larger than a certain threshold are fully counted in TEM micrographs, whereas XLPA detects all the loops in the entire size range. This new analysis procedure shows that in neutron irradiated Zircaloy-2 in the channel-box materials the total DD is larger than in the cladding materials, even though TEM counting shows the opposite. We also found that there is a correlation between the reciprocal square-root of < a >-loop DDs and the diameter of < a >-loops. Our work shows that irradiation induced loop-formation and irradiation-damage in general can be better determined when we combine TEM investigations with XLPA.
机译:中子或质子辐照引起的锆及其合金中的位错环通常用电子显微镜方法进行表征。在塑性变形材料中,X射线线轮廓分析(XLPA)是目前确定位错密度(DDs)的一种成熟工具,XLPA和TEM分析之间具有极好的一致性。然而,在辐照锆合金中,XLPA测定的DDs通常比TEM测定的DDs大得多。在离子辐照的铜和钨中,X射线衍射或MD模拟给出的位错环密度比常规TEM分析大得多,这表明TEM未检测到最小的环。基于这些结果,我们开发了一种新的方法来确定辐照诱导位错环的幂律尺寸分布。我们认为,在TEM显微照片中,只有大于某个阈值的环才被完全计数,而XLPA检测到整个尺寸范围内的所有环。这一新的分析程序表明,在通道盒材料中的中子辐照锆-2合金中,总DD大于包层材料中的DD,尽管TEM计数显示相反。我们还发现环DDs的倒数平方根与环的直径之间存在相关性。我们的工作表明,将TEM研究与XLPA相结合,可以更好地确定辐照诱导的环形成和辐照损伤。

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