Fabrication of solution-processed ambipolar electrolyte-gated field effect transistors from a MoS2-polymer hybrid for multifunctional optoelectronics

摘要

Few-layer molybdenum disulfide (MoS2), which has weak interlayer van der Waals bonds and strong intralayer covalent bonds, is of huge interest in optoelectronic applications due to its scalable production, tunable bandgap and mechanical flexibility. Here, we present high-performance ambipolar electrolyte-gated field effect transistors (amEGFETs) based on a solution-processed MoS2-polymer hybrid. They exhibit hole and electron mobilities of 0.21 cm(2) V-1 s(-1) and 0.04 cm(2) V-1 s(-1), respectively, together with a high current on/off ratio of >10(6) for both p-type and n-type operations. The pronounced ambipolar characteristics are essentially determined by the large interpenetrating network formed at the semiconductor/electrolyte interface. Using such a device, we demonstrate for the first time low-power operations of complementary metal-oxide semiconductor (CMOS)-compatible and cost-efficient electrical inverter and optical modulator. Our results broaden the future optoelectronic applications of two-dimensional semiconductors.