The Pivotal Role of Thermal Annealing of Cadmium Telluride Thin Film in Optimizing the Performance of CdTe/Si Solar Cells

摘要

The main focus of this framework is the preparation of CdTe nanocrystalline thin films (similar to 120 nm) on single crystal p-Si wafers (270 mu m) with Miller index (100) using thermal evaporation. Then, the In/n-CdTe/p-Si/Al solar cell was successfully fabricated. The dark I-V characteristics for the fabricated solar cell have been determined in range of 300-375 K and an applied voltage range of - 2 to 2 V. The fabricated solar cell's behavior was thoroughly explained. As a result, the important parameters for the fabricated solar cell such as the rectification ratio RR, the junction resistance R-J, ideality factor of solar cell n, the shunt resistance R-sh, the series resistance R-s, the barrier height created at the interface between the CdTe thin film and the p-Si wafer phi(b), the energy of trap level E-t and the activation energy of carriers's recombination in the depletion region Delta E were determined. Finally, the Poole-Frenkel beta(PF) and Schottky beta(S) parameters were computed.