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首页> 外文期刊>Journal of Electronic Materials >Sputter-Grown Pd-Capped CuO Thin Films for a Highly Sensitive and Selective Hydrogen Gas Sensor
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Sputter-Grown Pd-Capped CuO Thin Films for a Highly Sensitive and Selective Hydrogen Gas Sensor

机译:用于高敏感和选择性氢气传感器的溅射生长的PD-LAPE CUO薄膜

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摘要

In the present work, hydrogen gas sensing properties of palladium-capped copper oxide (Pd/CuO) thin films have been investigated. The Pd/CuO thin films were deposited on glass substrate for different deposition times (10-30 min) using direct current magnetron sputtering. The Pd/CuO thin films were characterized by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy for their structural, morphological and compositional properties, respectively. The Pd/CuO thin film sensor deposited for 10 min presents a remarkable sensing performance with fast response/recovery time of 10 s/50 s for hydrogen gas at a concentration of (1000 ppm) and optimum operating temperature of 300 degrees C. The sensor is observed to be highly selective towards hydrogen (H-2) gas compared to the other gases such as carbon monoxide (CO) and ammonia (NH3). The sensor is stable under high humidity conditions (60% RH). The studied Pd/CuO thin film sensor can be used to design a simple and low-cost sensor to detect low concentrations of H-2 gas for use in hydrogen-driven industries.
机译:本文研究了钯包覆氧化铜(Pd/CuO)薄膜的氢气传感特性。采用直流磁控溅射法在玻璃衬底上沉积了不同沉积时间(10-30min)的Pd/CuO薄膜。用x射线衍射、场发射扫描电子显微镜、原子力显微镜和x射线光电子能谱对Pd/CuO薄膜的结构、形貌和成分进行了表征。沉积10分钟的Pd/CuO薄膜传感器对浓度为(1000 ppm)的氢气具有10 s/50 s的快速响应/恢复时间,最佳工作温度为300°C。与一氧化碳(CO)和氨(NH3)等其他气体相比,该传感器对氢气(H-2)具有高度选择性。传感器在高湿度条件下(相对湿度60%)稳定。所研究的Pd/CuO薄膜传感器可用于设计一种简单、低成本的传感器,以检测氢驱动工业中使用的低浓度H-2气体。

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