Ultraviolet Radiation-Emitting Gd3+-Doped Sr2ZnSi2O7 Host Lattice Prepared by Sol-Gel Procedure and Evaluation of Gamma-Ray Exposure Parameters

摘要

Using the sol-gel process, a series of Sr2-xZnSi2O7:xGd (0.01 <= x <= 0.11) samples was fabricated. Their crystal characteristics, surface morphologies, and spectral characteristics were analyzed using X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy. Upon 272-nm excitation, a prominent emission band appeared at 313 nm (P-6(7/2) -> S-8(7/2)) in all the samples. The electron paramagnetic resonance (EPR) and PL analyses confirmed the presence of Gd3+ in the Sr2ZnSi2O7 structure, where the Gd3+ ions occupied distorted Sr2+ sites in the host lattice. Additionally, three photon interaction parameters, namely the mass attenuation coefficient, effective atomic number, and effective electron density, were calculated within the 1 keV-100 GeV photon energy range for all the samples. These photon interaction parameters varied widely over the studied energy range. Particularly, the shielding effectiveness increased with increasing gadolinium concentration. These interaction parameters will be very useful for shielding applications against gamma-rays.