Al Doped ZnO Thin Film Based Ultraviolet Photo-Conductive Sensor Prepared by Sol-Gel Spin-Coating Method

摘要

Aluminum (Al) doped zinc oxide (ZnO) thin film based ultraviolet (UV) photoconductive sensors were prepared through sol gel spin-coating method on the glass substrates. The structural and photocurrent properties were investigated for sensor prepared using thin films annealed at 350-500 °C by x-ray diffractometer (XRD) and current-voltage (I- V) measurement system, respectively. The XRD investigation showed that the crystallinity of the thin films increased at higher annealing temperature with preferential growth on (002) orientation. The annealing process at higher temperatures also increased (002) orientation peak of the thin films. The photocurrent properties of Al doped ZnO thin films based ultraviolet photoconductive sensors improved with annealing temperatures as well as UV response characteristic.