首页> 外文期刊>Journal of Colloid and Interface Science >Functional facet isotype junction and semiconductor/r-GO minor Schottky barrier tailored In2S3@r-GO@(040/110)-BiVO4 ternary hybrid
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Functional facet isotype junction and semiconductor/r-GO minor Schottky barrier tailored In2S3@r-GO@(040/110)-BiVO4 ternary hybrid

机译:功能方面的同学injction和半导体/ r-go小肖特基障碍在2s3 @ r-go @(040/110)-bivo4三元杂交

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摘要

Efficient interfacial exciton transfer and separation have been regarded as the foremost confront of semiconductor oriented photocatalysis. The simultaneous discovery of crystal facet isotype heterojunction across the (040)-reduction and (110)-oxidation facet of monoclinic scheelite BiVO4 crystal; and Schottky junction at the interfacial region of BiVO4 crystal with well-exposed functional (040) facet and r-GO sheets has been reflected as an efficient electron injection route. In this context lucrative architecture of a high productive all-solid-state Z-scheme charge transfer dynamics In2S3@r-GO@(040/110)-BiVO4 isotype ternary hybrid photocatalyst was carried out and well-validated by FESEM and HRTEM analyses. Photoelectrochemical measurements have revealed that the accumulated photo-electrons over the exposed (040)-crystal facet of BiVO4 truncated bipyramid easily cross the minor Schottky junction to expedite the unidirectional injection to the pi-pi conjugated two-dimensional planar r-GO structure. Besides, subsequent trapping of the injected electrons by the photoinduced holes of In2S3 leading to a superior charge carrier separation in the material, validated by PL, EIS, Mott-Schottky, and transient photocurrent analysis. Perceptibly, this intimate interfacial interacted crystal facet dependent electron shuttle provided a longer life span electrons and holes to settle in the conduction band of In2S3 and valence band of (110)-BiVO4, respectively, for elevated photo-activity efficiency. The In2S3@r-GO@(040/110)-BiVO4 ternary hybrid contributes 89.7% of Ciprofloxacin (CIP) detoxification in 150 min and 885.43 mu mol of O-2 evolution in 120 min. More in, the constructive interrelations of resultant Physico-chemical, photoelectrochemical, and augmented photocatalytic redox efficiency were well-illustrated. This unique association semiconductor ternary hybrid photocatalyst via metal-free mediating agent crystal-facet sandwich structure will provide a scientific innovative basis for rational design and realization of advanced Z-scheme photocatalytic system for energy and environment application. (C) 2020 Elsevier Inc. All rights reserved.
机译:高效的界面激子转移和分离一直被认为是半导体光催化的首要任务。在单斜白钨矿BiVO4晶体的(040)-还原面和(110)-氧化面上同时发现晶面同型异质结;BiVO4晶体界面区的肖特基结具有良好的功能(040)面和r-GO片,被认为是一种有效的电子注入途径。在这种情况下,高生产率的全固态Z-方案电荷转移动力学的结构非常有利In2S3@r-制备了GO@(040/110)-BiVO4同型三元杂化光催化剂,并通过FESEM和HRTEM分析进行了验证。光电化学测量表明,BiVO4截短双锥的暴露(040)晶面上的累积光电电子容易穿过小肖特基结,从而加速对π-π共轭二维平面r-GO结构的单向注入。此外,In2S3的光致空穴随后捕获了注入的电子,从而在材料中产生了更好的载流子分离,并通过PL、EIS、Mott-Schottky和瞬态光电流分析进行了验证。可以看出,这种亲密的界面相互作用的晶体刻面依赖的电子梭提供了更长的寿命,电子和空穴分别位于In2S3的导带和(110)-BiVO4的价带,以提高光活性效率。这个In2S3@r-GO@(040/110)-BiVO4三元杂化物在150分钟内贡献了89.7%的环丙沙星(CIP)脱毒,在120分钟内贡献了885.43μmol的O-2释放。此外,还很好地说明了所得物理化学、光电化学和增强的光催化氧化还原效率之间的建设性相互关系。这种独特的无金属中介剂-晶面三明治结构的半导体-三元杂化光催化剂将为合理设计和实现先进的Z-方案光催化系统提供科学创新依据,用于能源和环境应用。(C) 2020爱思唯尔公司版权所有。

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