首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Anisotropic thermoelectric transport in textured Sb1.5Bi0.5Te3 nanomaterial synthesized by facile bottom-up physical process
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Anisotropic thermoelectric transport in textured Sb1.5Bi0.5Te3 nanomaterial synthesized by facile bottom-up physical process

机译:纹理的SB1.5bi0.5te3纳米材料中的各向异性热电传输通过便利自下步物理过程合成

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High anisotropy in thermal conductivity (K) coupled with anisotropy in Seebeck coefficient (S) has resulted in peak zT value of 0.85 at 150 degrees C in the textured Sb1.5Bi0.5Te3 nanomaterial in perpendicular to the preferential ab-plane direction. Further, strong and opposite temperature dependences in electrical conductivity (sigma) and thermal conductivity, in the ranges of 1.6-1.8 and 1.4-1.8 respectively, have resulted in better average zT value of 0.72 in the 50 degrees C-250 degrees C temperature range along this direction, where zT = (S-2 sigma/kappa)T. The high anisotropy in Seebeck coefficient in the range of 0.82-0.84 is peculiar, which may be attributed to differential scattering for holes and electrons by oxide interface on the abplanes. Sample temperature and laser power dependent Raman spectroscopy have revealed that E-g(2) mode is dominant phonon transfer mode in this material and therefore, scattering of E-g(2) mode phonons may be critical in obtaining thermal conductivity reduction. The nanomaterial has been synthesized by a facile bottom-up physical synthesis process and consolidated by direct current hot pressing. Our synthesis process requires controlled melting of ingredient metals at just above their melting points-rocking and air quenching. The synthesized nanomaterial hardly experiences its melting point in this process. This energy efficient process does not require any kind of milling and produces single phase nanomaterial in unique plate-like morphology, which easily results in high texturing. This texturing has been studied by XRD analysis as well as SEM images and is also correlated with texture factor in the thermoelectric measurements. HRTEM image has shown high grain boundary density within the plates, but these have not been able to scatter phonons for thermal conductivity reduction within ab-plane. This is possibly due to smaller than optimum size of these randomly oriented grains. Such features also offer possibility of zT enhancement along preferential ab-plane direction in the textured specimen. Further, the study of anisotropy in power output density and thereby, engineered power factor under practical temperature gradients is also presented. The process also offers simplicity in obtaining further thermal conductivity reduction in perpendicular to the preferential ab-plane direction by use of tellurium or semiconductor interface layer or by use of metallic cluster in the ab-plane direction. (C) 2020 Elsevier B.V. All rights reserved.
机译:热导率(K)的高各向异性加上塞贝克系数(S)的各向异性导致织构Sb1在150℃时的峰值zT值为0.85。5Bi0。5Te3纳米材料垂直于优先ab平面方向。此外,导电率(sigma)和热导率(分别在1.6-1.8和1.4-1.8范围内)的强烈和相反的温度依赖性,导致在50℃-250℃温度范围内沿该方向的平均zT值为0.72,其中zT=(S-2 sigma/kappa)T。塞贝克系数在0.82-0.84范围内的高各向异性是独特的,这可能是由于ABF平面上氧化物界面对空穴和电子的微分散射所致。样品温度和激光功率相关的拉曼光谱表明,在这种材料中,E-g(2)模式是主要的声子转移模式,因此,E-g(2)模式声子的散射可能是获得热导率降低的关键。该纳米材料是通过一种简单的自下而上的物理合成过程合成的,并通过直流热压进行固化。我们的合成工艺要求原料金属在略高于熔点的温度下进行受控熔化——摇动和空气淬火。在这个过程中,合成的纳米材料几乎没有经历熔点。这种高效节能的工艺不需要任何类型的研磨,可以生产出具有独特板状形貌的单相纳米材料,很容易产生高织构。这种织构已经通过XRD分析和SEM图像进行了研究,并且还与热电测量中的织构因子相关。HRTEM图像显示,板内的晶界密度很高,但这些板无法散射声子以降低ab平面内的热导率。这可能是因为这些随机取向晶粒的尺寸小于最佳尺寸。这些特征也为织构试样沿优先ab平面方向的zT增强提供了可能性。此外,还研究了功率输出密度的各向异性,以及实际温度梯度下的工程功率因数。通过使用碲或半导体界面层或通过使用ab平面方向上的金属团簇,该方法还提供了在垂直于优先ab平面方向上获得进一步热导率降低的简单性。(C) 2020爱思唯尔B.V.版权所有。

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