Fundamental Research in ICP-OES and ICPMS

摘要

Exciting research progress is being made to quantitatively link fundamental processes and practical ICP analysis. The results of such fundamental research are used to improve practical analysis. Investigation and modeling of space charge effects have led to the development of ICPMS instruments that are less susceptible to matrix effects. Plasma modeling has resulted in improvements in practical analysis of semiconductor gases and development of helium plasmas for ICPMS. Some manufacturers claim that their instrument is better than others on the basis of fundamental plasma properties such as electron number density. Further improvements are unlikely to be gained from purely empirical approaches. One of the biggest dangers in ICP analysis today is the possibility of obtaining inaccurate results without any indication of a problem. Results from funda- -mental research are needed to improve analysis accuracy, develop practical diagnostics and intelligent instruments, and reduce operator skill requirements. Shorter sample washout times, reduced nebulizer-related noise, more efficient, robust ion transport in ICPMS, and better precision are also likely to be achieved.