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机译:高效的半极(11-22)550 nm黄色/绿色IngaN发光二极管低缺损密度(11-22)GaN / Sapphire模板
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
CNRS CRHEA Rue Bernard Gregory F-06560 Valbonne France;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA;
semipolar GaN; MOCVD; light-emitting diodes; InGaN; atom probe tomography;
机译:高效的半极(11-22)550 nm黄色/绿色IngaN发光二极管低缺损密度(11-22)GaN / Sapphire模板
机译:半极性(11-22)InGaN / GaN蓝绿色发光二极管的演示
机译:半极性(11-22)InGaN / GaN蓝绿色发光二极管的演示
机译:绿色半极(
机译:发光二极管的氮化镓/蓝宝石和氧化锌/蓝宝石异质结构(极性和非极性)中的薄膜外延,缺陷和界面。
机译:具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管
机译:高效(11-22)高质量的半极(11-22)高质量(11-22)GAN / SAPPHIRE模板的研究