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Self-Organization of Ions at the Interface between Graphene and Ionic Liquid DEME-TFSI

机译:石墨烯与离子液体DEME-TFSI界面处的离子自组织

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Electrochemical effects manifest as nonlinear responses to an applied electric field in electrochemical devices, and are linked intimately to the molecular orientation of ions in the electric double layer (EDL). Herein, we probe the origin of the electrochemical effect using a double-gate graphene field effect transistor (GFET) of ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis (trifluoromethylsulfonyl)imide (DEME-TFSI) top-gate, paired with a ferroelectric Ph0.92La0.08Zr0.52Ti0.48O3 (PLZT) back-gate of compatible gating efficiency. The orientation of the interfacial molecular ions can be extracted by measuring the GFET Dirac point shift, and their dynamic response to ultraviolet-visible light and a gate electric field was quantified. We have observed that the strong electrochemical effect is due to the TFSI anions self-organizing On a treated GFET surface. Moreover, a reversible order-disorder transition of TFSI anions self organized on the GFET surface can be triggered by illuminating the interface with ultraviolet-visible light, revealing that it is a useful method to control the surface ion configuration and the overall performance of the device.
机译:电化学效应表现为电化学装置中施加电场的非线性响应,并且与电双层(EDL)中的离子的分子取向密切相关。在此,我们使用离子液体N,N-二乙基-N-(2-甲氧基乙基)-N-甲基铵双(三氟甲基磺酰基)酰亚胺(DEME-)的双栅极石墨烯场效应晶体管(GFET)探测电化学效果的来源TFSI)顶级门,配对铁电PH0.92LA0.08ZR0.08ZR0.52TI0.48O3(PLZT)兼容门控效率的后栅极。可以通过测量GFET Dirac点偏移来提取界面分子离子的取向,并且它们对紫外可见光和栅电场的动态响应被定量。我们已经观察到强大的电化学效应是由于TFSI阴离子在处理过的GFET表面上自组织。此外,通过用紫外线可见光照射界面可以触发在GFET表面上组织的TFSI阴离子自我的可逆令失调转变,并揭示了控制表面离子配置和装置的整体性能的有用方法。

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