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Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes

机译:聚乙烯亚胺型绝缘性 - 高效倒量子点发光二极管的显性电荷注入平衡

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摘要

Quantum dot (QD) light-emitting diodes (QLEDs) with an inverted architecture suffer from charge-injection imbalance and severe QD charging, which degrade device performance. Blocking excess electron injection into QDs is crucial for efficient inverted QLEDs. It is observed that polyethylenimine (PEI) has two opposite effects on electron injection: one is blocking electron injection by its intrinsic insulativity and the other one is promoting electron injection by reducing the work function of ZnO/PEI. In this work, the insulating nature of PEI has been dominantly utilized to reduce electron injection and the charge-injection balance is realized when PEI becomes thicker and blocks more excess electrons. Furthermore, PEI contributes to QD charging suppression and results in a smoother surface morphology than that of ZnO nanoparticles, which is beneficial for leakage current reduction and QD deposition. As a result, the optimized QLED with 15 nm PEI shows a 2.5 times improved efficiency compared to that of the QLED without PEI. Also, the QLED possesses the maximum external quantum efficiency and current efficiency of 16.5% and 18.8 cd/A, respectively, accompanied with a low efficiency roll-off of 15% at 1000 cd/m(2), which is comparable to that of the reported inverted red QLED with the highest efficiency.
机译:具有倒置结构的量子点(QD)发光二极管(QLED)遭受充电注入不平衡和严重的QD充电,这降低了装置性能。将过量的电子注入压缩成QD对于有效倒QDS至关重要。观察到聚对乙烯(PEI)对电子注射有两个相反的效果:一种通过其固有型绝缘性阻断电子注射,另一个是通过降低ZnO / PEI的功函数来促进电子注射。在这项工作中,PEI的绝缘性是主要用来减少电子注射,并且当PEI变厚并阻挡更多的电子时,实现了电荷注入平衡。此外,PEI有助于QD充电抑制,并导致比ZnO纳米颗粒的更平滑的表面形态,这有利于漏电流降低和QD沉积。结果,与15nm PEI的优化QLED显示出与没有PEI的QLED的效率的增加2.5倍。此外,QLED分别具有16.5%和18.8℃/ a的最大外部量子效率和电流效率,伴随着15%的低效率滚动,在1000cd / m(2),其与报告的倒置红色QLED具有最高效率。

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