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首页> 外文期刊>ACS applied materials & interfaces >Atomic-Level Co3O4 Layer Stabilized by Metallic Cobalt Nanoparticles: A Highly Active and Stable Electrocatalyst for Oxygen Reduction
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Atomic-Level Co3O4 Layer Stabilized by Metallic Cobalt Nanoparticles: A Highly Active and Stable Electrocatalyst for Oxygen Reduction

机译:由金属钴纳米颗粒稳定的原子级CO3O4层:一种高活性和稳定的电催化剂,用于氧还原

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摘要

Developing atomic-level transition oxides may be one of the most promising ways for providing ultrahigh electrocatalytic performance for oxygen reduction reaction (ORR), compared with their bulk counterparts. In this article, we developed a set of atomically thick Co3O4 layers covered on Co nanoparticles through partial reduction of Co3O4 nanoparticles using melamine as a reductive additive at an elevated temperature. Compared with the original Co3O4 nanoparticles, the synthesized Co3O4 with a thickness of 1.1 nm exhibits remarkably enhanced ORR activity and durability, which are even higher than those obtained by a commercial Pt/C in an alkaline environment. The superior activity can be attributed to the unique physical and chemical structures of the atomic-level oxide featuring the narrowed band gap and decreased work function, caused by the escaped lattice oxygen and the enriched coordination-unsaturated Co2+ in this atomic layer. Besides, the outstanding durability of the catalyst can result from the chemically epitaxial deposition of the Co3O4 on the cobalt surface. Therefore, the proposed synthetic strategy may offer a smart way to develop other atomic-level transition metals with high electrocatalytic activity and stability for energy conversion and storage devices.
机译:与其散装对应物相比,显影原子水平过渡氧化物可以是提供氧还原反应(ORR)的超高电催化性能的最有希望的方法之一。在本文中,我们通过在升高温度下,在Co 3 O 4纳米颗粒部分减少了一组原子厚的CO3O4层,通过将三聚氰胺作为还原添加剂部分减少。与原始CO 3O4纳米颗粒相比,厚度为1.1nm的合成的CO3O4表现出显着提高的抗体活性和耐久性,其甚至高于碱性环境中的商业Pt / C获得的耐用性。优异的活性可归因于由逸出的晶格氧气和该原子层中的富集的配位 - 不饱和CO 2 +引起的具有狭窄带隙和减少的工作功能的原子水平氧化物的独特物理和化学结构。此外,催化剂的出色耐久性可能是由Co3O4对钴表面上的化学外延沉积产生的。因此,该拟议的合成策略可以提供一种智能方式来开发具有高电催化活性和能量转换和储存装置的高电催化活性和稳定性的其他原子水平过渡金属。

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  • 作者单位

    Beijing Univ Chem Technol State Key Lab Chem Resource Engn Beijing Key Lab Electrochem Proc &

    Technol Mat Beijing 100029 Peoples R China;

    Beijing Univ Chem Technol State Key Lab Chem Resource Engn Beijing Key Lab Electrochem Proc &

    Technol Mat Beijing 100029 Peoples R China;

    Beijing Univ Chem Technol State Key Lab Chem Resource Engn Beijing Key Lab Electrochem Proc &

    Technol Mat Beijing 100029 Peoples R China;

    Beijing Univ Chem Technol State Key Lab Chem Resource Engn Beijing Key Lab Electrochem Proc &

    Technol Mat Beijing 100029 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    atomic-level Co3O4 layer; vacancy defects; band gap; work function; oxygen reduction reaction;

    机译:原子级CO3O4层;空位缺陷;带隙;工作功能;氧还原反应;

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