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机译:在P型Bi2te3 / Bi0.5SB1.5TE3超晶格膜中实现平面外电ZT = 1.44的Merit Zt = 1.44,具有低界面抗性
Chung Ang Univ Dept Phys Seoul 06974 South Korea;
Chung Ang Univ Dept Phys Seoul 06974 South Korea;
Chung Ang Univ Dept Phys Seoul 06974 South Korea;
Chung Ang Univ Dept Phys Seoul 06974 South Korea;
Chung Ang Univ Dept Phys Seoul 06974 South Korea;
Chung Ang Univ Dept Phys Seoul 06974 South Korea;
phonon transport; energy filtering effect; out-of-plane thermoelectric properties; phonon scattering; thermal conductivity; Seebeck coefficient;
机译:在P型Bi2te3 / Bi0.5SB1.5TE3超晶格膜中实现平面外电ZT = 1.44的Merit Zt = 1.44,具有低界面抗性
机译:具有平面内平面结构的纳米结构p型Bi0.5Sb1.5Te3和n型Bi2Te3薄膜热电能量发生器的热电表征和制备
机译:P型(Bi2Te3)(X) - (SB2TE3)(1-X)合金的高温优异的优选优异,由元件机械合金化和火花等离子体烧结制成的合金
机译:PbTe量子阱中具有高热电品质因数的p型PbEuTe / PbTe MQW结构的表征
机译:具有增强的热电性能和器件性能的N型和P型纳米铋(锑)碲(硒)合金材料。
机译:在重型p型半赫斯勒热电材料中实现高品质
机译:在PTYPE BI2TE3 / BI0.5SB1.5TE3超晶格膜中实现不同的热电图,具有低界面抗性