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首页> 外文期刊>ACS applied materials & interfaces >Oxygen-Vacancy-Dominated Cocatalyst/Hematite Interface for Boosting Solar Water Splitting
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Oxygen-Vacancy-Dominated Cocatalyst/Hematite Interface for Boosting Solar Water Splitting

机译:用于升压太阳能分裂的氧空型束缚助催化剂/赤铁矿界面

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摘要

Surface suppression is one of critical issues for semiconductors in photoelectrochemical (PEC) water splitting. Deposition of oxygen evolution cocatalysts on photo anodes can improve the oxygen evolution rate, but still it has some limits in some cases. In this work, we propose a new and simple precipitation approach to transform the surface of hematite into iron phosphate (Fe-Pi). Further, Ar-plasma treatment on Fe-Pi/Fe2O3 introduces oxygen vacancies on the phosphorous and photoanode. A surface phosphate treatment accelerates the transfer of holes from the bulk to the surface. Besides, creating oxygen vacancy defects on Fe-Pi/Fe2O3 can significantly increase the reactivity of active sites, leading to the remarkable enhancement in oxygen evolution reaction activity and PEC performance. The resulting photoanode has a current density of 2.71 mA cm(-2) at 1.23 V-RHE and 3.5 mA cm(-2) at 1.50 V-RHE under simulated solar light condition. The reduced surface recombination by Fe-Pi layer and Ar-plasma treatment is confirmed by electrochemical analysis. These findings give a great potential of the use of a combination strategy for cocatalyst deposition and optimizing the performance of hematite.
机译:表面抑制是光电化学(PEC)水分裂中半导体的关键问题之一。在光阳极上沉积氧气进化助催化剂可以提高氧气进化率,但在某些情况下仍然存在一些限制。在这项工作中,我们提出了一种新的和简单的沉淀方法来将赤铁矿表面转化为磷酸铁(Fe-PI)。此外,Fe-PI / Fe2O3上的Ar离子处理引入了磷和光电沸秒的氧空位。表面磷酸盐处理加速了从体积到表面的孔的转移。此外,在Fe-PI / Fe 2 O 3上产生氧气空位缺陷可以显着提高活性位点的反应性,导致氧气进化反应活性和PEC性能的显着增强。在模拟的太阳能灯条件下,所得PhotoNode在1.23V-rhe的电流密度为2.71mAcm(-2)和3.5mAcm(-2)。通过电化学分析证实了Fe-Pi层和ar离子处理的降低的表面重组。这些调查结果具有使用助催化剂沉积和优化赤铁矿性能的组合策略的潜力。

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