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Oriented Growth of Ultrathin Single Crystals of 2D Ruddlesden-Popper Hybrid Lead Iodide Perovskites for High-Performance Photodetectors

机译:面向超薄单晶的2D Ruddlesden-popper杂交铅碘化碘化物钙钛矿的高性能光电探测器的增长

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摘要

Compared with their 3D counterparts, layered 2D Ruddlesden-Popper perovskites (2D RPPs) with the formula of (A'),A(n-1)Pb(n)X(3n+1) exhibit improved photo and moisture stability. To develop flexible single-crystalline electronics and wearable devices, costeffective growth of large-area single crystals of 2D RPPs with large lateral size, ultrathin thickness, parallel orientation, and well-defined and controlled n values are highly desirable, but it remains still a challenge. Here, we modified the space-confined aqueous solution growth method to fabricate single-crystalline films of (BA)(2)(MA)(n-1)PbnX3n+1 and n = 1, 2, 3, respectively, with the lateral size reaching millimeter and thickness about 400-1000 nm. Moreover, the quantum well layers are found to be parallel to the substrate, well suitable for lateral transport requirement. We successfully integrated ultrathin single crystals of (BA)(2)(MA)(n-1)Pb(n)X(3n+)1 (n = 1-3) into a metal-semiconductor-metal two-terminal photodetector. The photoresponsive wavelength range was extended from 525 nm for n = 1 and 590 nm for n = 2 to 630 nm for n = 3 as a result of the reduced exciton band gap. The device of n = 2 single crystals shows the highest responsivity of 2.96 A/W and a detectivity of 10(13) jones, while the device of n = 3 shows the lowest dark current 10(-14) A, and therefore, its on/off ratio reaches 2862 at the bias voltage of 1 V.
机译:与它们的3D对应物相比,分层的2D rud​​dlesden-popper(2d rpps)具有(a')的公式,a(n-1)pb(n)x(3n + 1)表现出改善的照片和水分稳定性。为了开发灵活的单晶电子和可穿戴装置,具有大横向尺寸,超薄厚度,平行取向和明确和控制的n值的大面积单晶的大面积单晶的成本生长,非常可取,但它仍然是一个挑战。在这里,我们修改了空间限制的水溶液生长方法,以分别用横向制造(Ba)(2)(2)(2)(MA)(N-1)(N-1)(N-1)(N-1)(N-1)(N-1)PBNX3N + 1和N = 1,2,3的单晶薄膜尺寸达到毫米和厚度约为400-1000nm。此外,发现量子阱层平行于基板,适用于横向运输要求。我们将超薄单晶(2)(2)(MA)(N-1)(N)×(3N +)1(n = 1-3)的超薄单晶集成到金属半导体 - 金属双端子光电探测器中。由于减少的激子带隙,光响应声波长范围从525nm延伸到n = 1和590nm,对于n = 2至n = 3 = 3 = 3。 n = 2个单晶的装置显示出2.96 a / w的最高响应度,以及10(13)岁的探测器,而n = 3的装置显示最低的暗电流10(-14)A,因此ON / OFF比率在1V的偏置电压下达到2862。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2019年第17期|共8页
  • 作者单位

    Tianjin Univ Collaborat Innovat Ctr Chem Sci &

    Engn Tianjin Inst Mol Plus Dept Chem Tianjin 300072 Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Mat Proc &

    Die &

    Mould Technol Sch Mat Sci &

    Engn Wuhan 430074 Hubei Peoples R China;

    Capital Normal Univ Dept Chem Beijing Key Lab Opt Mat &

    Photon Devices Beijing 100048 Peoples R China;

    Beijing Jiaotong Univ Sch Sci Key Lab Luminescence &

    Opt Informat Minist Educ Beijing 100044 Peoples R China;

    Tianjin Univ Collaborat Innovat Ctr Chem Sci &

    Engn Tianjin Inst Mol Plus Dept Chem Tianjin 300072 Peoples R China;

    Beijing Jiaotong Univ Sch Sci Key Lab Luminescence &

    Opt Informat Minist Educ Beijing 100044 Peoples R China;

    Capital Normal Univ Dept Chem Beijing Key Lab Opt Mat &

    Photon Devices Beijing 100048 Peoples R China;

    Huazhong Univ Sci &

    Technol State Key Lab Mat Proc &

    Die &

    Mould Technol Sch Mat Sci &

    Engn Wuhan 430074 Hubei Peoples R China;

    Tianjin Univ Collaborat Innovat Ctr Chem Sci &

    Engn Tianjin Inst Mol Plus Dept Chem Tianjin 300072 Peoples R China;

    Tianjin Univ Collaborat Innovat Ctr Chem Sci &

    Engn Tianjin Inst Mol Plus Dept Chem Tianjin 300072 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    orientated growth; 2D perovskite; single crystal film; mechanical exfoliation; photodetector;

    机译:定向增长;2D钙钛矿;单晶膜;机械剥离;光电探测器;

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