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Highly Conductive Sb-SnO2 Nanocrystals Synthesized by Dual Nonthermal Plasmas

机译:由双重非热等离子体合成的高导电SB-SNO2纳米晶体

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Nonthermal plasma synthesis of transparent conducting oxide nanocrystals can offer advantages, for example, ligand-free surfaces, over traditionally used colloidal synthesis methods. When it comes to multicomponent (doped) metal oxide nanocrystal synthesis, uniform distribution of different metal elements and suppressing surface segregation of secondary resistive phases have been concerns. Specifically, surface segregation of resistive secondary phases reduces the electrical conductivity of nanocrystal assemblies. In this work, we demonstrate a nonthermal dual-plasma synthesis method capable of forming Sb-SnO2 (ATO) nanocrystals with a uniform composition distribution and apparently insignificant surface segregation of the dopant. A drastic increase in conductivity was observed in ATO thin films comprised of nanocrystals formed using a dual-plasma configuration compared to nanocrystals formed using a single-plasma configuration. The conductivity values of as-deposited porous films comprised of ATO nanocrystals, prepared using the dual-plasma approach, were on the order of 0.1 S cm(-1), which to our knowledge is the highest conductivity reported to-date for that type of high surface area material. Annealing the films comprised of ATO nanocrystals at 500 degrees C for 2 h in air increased the conductivity and improved ambient stability, without significantly affecting the crystallite size.
机译:非热血浆合成透明导电氧化物纳米晶体可以提供优点,例如,无配体表面,传统上使用的胶体合成方法。当涉及多组分(掺杂)金属氧化物纳米晶体合成时,不同金属元素的均匀分布和抑制二次电阻阶段的表面偏析。具体地,电阻二次相的表面偏析降低了纳米晶体组件的电导率。在这项工作中,我们证明了能够形成具有均匀成分分布的Sb-SnO 2(ATO)纳米晶体的非热双血浆合成方法,并且显然是掺杂剂的表面偏析。与使用单浆构型形成的纳米晶体相比,在由使用双等离子体构型形成的纳米晶体构成的ATO薄膜中观察到导电率的激烈增加。由双等离子体方法制备的ATO纳米晶体构成的沉积多孔膜的电导率值约为0.1 s cm(-1),这对我们的知识是迄今为止报告的最高导电性高表面积材料。在500摄氏度下以500℃下由AtO纳米晶体组成的薄膜在空气中增加了导电性和改善的环境稳定性,而不会显着影响微晶尺寸。

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