机译:分层MOTE2对长期稳定电子产品的便利和可逆载体型操纵
Natl Chung Hsing Univ Dept Phys Taichung 40227 Taiwan;
Natl Chung Hsing Univ Dept Phys Taichung 40227 Taiwan;
Natl Chung Hsing Univ Dept Phys Taichung 40227 Taiwan;
Shenzhen Univ Inst Microscale Optoelect Minist Educ Int Collaborat Lab 2D Mat Optoelect Sci &
Technol Shenzhen 518060 Peoples R China;
Natl Chiao Tung Univ Dept Electrophys Hsinchu 30010 Taiwan;
Natl Chung Hsing Univ Dept Phys Taichung 40227 Taiwan;
Natl Chiao Tung Univ Dept Electrophys Hsinchu 30010 Taiwan;
Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30010 Taiwan;
Natl Chiao Tung Univ Dept Electrophys Hsinchu 30010 Taiwan;
Natl Chung Hsing Univ Instrument Ctr Taichung 40227 Taiwan;
Saitama Univ Grad Sch Sci &
Engn Dept Chem Saitama 3388570 Japan;
Shenzhen Univ Int Collaborat Lab 2D Mat Optoelect Sci &
Technol Minist Educ Inst Microscale Optoelect Inst Microscale Optoelect &
Engn Technol Res Ctr Shenzhen 518060 Peoples R China;
Natl Chiao Tung Univ Dept Electrophys Hsinchu 30010 Taiwan;
Natl Inst Mat Sci NIMS WPI Ctr Mat Nanoarchitechton WPI MANA Tsukuba Ibaraki 3050044 Japan;
Natl Chung Hsing Univ Dept Phys Taichung 40227 Taiwan;
carrier-type manipulation; alpha-MoTe2; telluride vacancy; electron-beam treatment; logic-circuit applications;
机译:分层MOTE2对长期稳定电子产品的便利和可逆载体型操纵
机译:离子液体门控单层的可逆电化学相变化块状的MOTE2
机译:单层MoTe2和WxMo1-xTe2合金中的电荷介导的可逆金属-绝缘体转变
机译:均质荧光薄膜作为长期稳定的显微镜参考层
机译:容易制造介孔结构的基于Zn2SnO 4的可逆锂离子存储阳极材料。
机译:无机层状材料异常稳定的〜100倍可逆和瞬时溶胀
机译:分层MOTE2朝向长期稳定电子器件的便利和可逆载体型操作