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Two-Dimensional Electron Gas at the Spinel/Perovskite Interface: Suppression of Polar Catastrophe by an Ultrathin Layer of Interfacial Defects

机译:在尖晶石/钙钛矿接口处的二维电子气体:通过超薄层的界面缺陷抑制极性灾难

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Two-dimensional electron gas (2DEG) at the interface between two insulating perovskite oxides has attracted much interest for both fundamental physics and potential applications. Here, we report the discovery of a new 2DEG formed at the interface between spinel MgAl2O4 and perovskite SrTiO3. Transport measurements, electron microscopy imaging, and first-principles calculations reveal that the interfacial 2DEG is closely related to the symmetry breaking at the MgAl2O4/SrTiO3 interface. The critical film thickness for the insulator-to-metal transition is approximately 32 angstrom, which is twice as thick as that reported on the widely studied LaAlO3/SrTiO3 system. Scanning transmission electron microscopy imaging indicates the formation of interfacial Ti-Al antisite defects with a thickness of similar to 4 angstrom. First-principles density functional theory calculations indicate that the coexistence of the antisite defects and surface oxygen vacancies may explain the formation of interfacial 2DEG as well as the observed critical film thickness. The discovery of 2DEG at the spinel/perovskite interface introduces a new material platform for designing oxide interfaces with desired characteristics.
机译:两个绝缘钙钛矿氧化物之间的界面处的二维电子气(2deg)吸引了对基本物理和潜在应用的兴趣。在这里,我们报告了在尖晶石MgAl2O4和Perovskite SRTiO3之间的界面处形成的新2deg的发现。运输测量,电子显微镜成像和第一原理计算表明,界面2deg与MgAl2O4 / srtio3接口处的对称性断裂密切相关。绝缘体 - 金属过渡的临界膜厚度约为32埃,其两倍于广泛研究的LAALO3 / SRTIO3系统上报道的两倍。扫描透射电子显微镜成像表明界面的Ti-Al防易缺陷的形成,厚度与4埃相似。第一原理的密度函数理论计算表明,防易缺陷和表面氧空位的共存可以解释界面2deg的形成以及观察到的临界膜厚度。在Spinel / Perovskite接口处发现的2deg引入了一种用于设计具有所需特性的氧化物界面的新材料平台。

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