Ion Migration-Induced Degradation and Efficiency Roll-off in Quasi-2D Perovskite Light-Emitting Diodes

摘要

Quasi-2D perovskites have attracted wide attention as the emitter of light-emitting diodes (LEDs) in recent years because of the ease of obtaining high external quantum efficiencies (EQEs). However, the quick degradation under continuous operation and significant EQE roll-off at high current densities are issues that need to be overcome for future practical applications using quasi-2D perovskite LEDs (PeLEDs). In this context, we discuss the mechanism of the degradation and EQE roll-off on the basis of ion migration. The migration of ligand cations though domain boundaries of quasi-2D perovskite films induces the gradual loss of defect passivation at the boundaries, which results in the reversible PeLED degradation and severe EQE roll-off. When the device operation time is long, the mobile cations enter and interact with the electron transport layer, leading to the stage of irreversible PeLED degradation. The device degradation mechanisms we discovered here are constructive for developing quasi-2D PeLEDs with better operational durability.