...
首页> 外文期刊>ACS nano >Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes
【24h】

Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

机译:溶液加工全无机异质结构用于湿度/温度稳定的钙钛矿量子点发光二极管的策略

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Recently, a pressing requirement of solid-state lighting sources with high performance and low cost has motivated increasing research in metal halide perovskites. However, the relatively low emission efficiency and poor operation stability of perovskite light-emitting diodes (LEDs) are still critical drawbacks. In this study, a strategy of solution-processed all-inorganic heterostructure was proposed to overcome the emission efficiency and operation stability issues facing the challenges of perovskite LEDs. Solution-processed n-ZnO nanoparticles and p-NiO are used as the carrier injectors to fabricate all-inorganic heterostructured CsPbBr_(3) quantum dot LEDs, and a high-efficiency green emission is achieved with maximum luminance of 6093.2 cd/m~(2), external quantum efficiency of 3.79%, and current efficiency of 7.96 cd/A. More importantly, the studied perovskite LEDs possess a good operation stability after a long test time in air ambient. Typically, the devices can endure a high humidity (75%, 12 h) and a high working temperature (393 K, three heating/cooling cycles) even without encapsulation, and the operation stability is better than any previous reports. It is anticipated that this work will provide an effective strategy for the fabrication of high-performance perovskite LEDs with good stability under ambient and harsh conditions, making practical applications of such LEDs a real possibility.
机译:最近,具有高性能和低成本具有高性能和低成本的固态照明源的压迫要求具有较高的金属卤化物钙锌矿的研究。然而,钙钛矿发光二极管(LED)的相对较低的发射效率和差的操作稳定性仍然是关键缺点。在该研究中,提出了一种溶液加工的全无机异质结构的策略,克服了佩洛夫斯LED面临的挑战的排放效率和运行稳定性问题。溶液加工的N- ZnO纳米颗粒和P-NIO用作载体注射器以制造全无机异质结构CSPBBR_(3)量子点LED,并且通过最大亮度为6093.2d / m〜( 2),外部量子效率为3.79%,电流效率为7.96℃/ a。更重要的是,在空气环境中长时间的测试时间之后,研究的Perovskite LED具有良好的操作稳定性。通常,即使没有封装,装置也可以忍受高湿度(75%,12小时)和高工作温度(393k,三个加热/冷却循环),并且操作稳定性优于任何先前的报告。预计这项工作将提供一种有效的策略,用于在环境和恶劣条件下具有良好的稳定性的高性能钙钛矿LED的制造,使得这种LED的实际应用是真正的可能性。

著录项

  • 来源
    《ACS nano》 |2018年第2期|共11页
  • 作者单位

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Qianjin Street 2699 Changchun 130012 China;

    Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering Zhengzhou University Daxue Road 75 Zhengzhou 450052 China;

    State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Qianjin Street 2699 Changchun 130012 China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 分子物理学、原子物理学;
  • 关键词

    CsPbBrlt; subgt; 3lt; /subgt; humidity tolerance; light-emitting diodes; perovskite; temperature tolerance;

    机译:CSPBBR<亚>3</ sub>湿度耐受性;发光二极管;PEROVSKITE;温度耐受性;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号