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Centimeter-Sized Inorganic Lead Halide Perovskite CsPbBr3 Crystals Grown by an Improved Solution Method

机译:厘米大小的无机铅卤化物钙钛矿CSPBBR3晶体通过改进的溶液方法生长

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摘要

As a member of the lead-halide perovskite family, inorganic perovskite CsPbBr3 exhibits excellent optical and electrical properties with higher stability to the environment. However, former efforts to obtain large-size CsPbBr3 single crystals with satisfactory quality using low temperature solution methods reached limited results. In this work, we have studied the growth of CsPbBr3 crystals using the antisolvent vapor-assisted crystallization (AVC) method. By adjusting the mole ratio of PbBr2 and CsBr, the phase diagram of the final products is acquired. Five regions are identified, including the Cs4PbBr6 single phase region, Cs4PbBr6 and CsPbBr3 two phases region, CsPbBr3 single phase region, CsPbBr3 and PbBr2 center dot 2[(CH3)(2)SO] metastable two phases region, and CsPbBr3 and PbBr2 center dot 2[(CH3)(2)SO] two phases region. Three methods are adopted to improve the size and crystalline quality of CsPbBr3. The growth rate is effectively tailored by diluting the antisolvent MeOH solution using DMSO to reduce the MeOH vapor pressure. Centimeter-size bright CsPbBr3 crystals have been obtained. The room temperature bandgap of CsPbBr3 is estimated at similar to 2.29 eV by the transmission spectra. The photoluminescence spectra show two strong emission peaks, located at 530 and 555 nm, respectively, which are related to the free and bond excitons. The resistivity is as large as 2.1 X 10(9)Omega cm(-3). Hall effect measurements demonstrate the CsPbBr3 is p-type conductivity with a hole carrier concentration of 4.55 X 10(7) cm(-3) and the mobility of 143 cm(2) s(-l). The resulting Au/CsPbBr3/Au device exhibits strong photoresponse to optical light, with an on-off ratio of two orders under a light emitting diode (similar to 1 mW/cm(2)) with a wavelength of 365-420 nm. Our research would shed more light on the growth and the photoresponse properties of CsPbBr3 crystals.
机译:作为卤化卤化氢钙钛矿家族的成员,无机钙钛矿CSPBBR3表现出优异的光学和电气性能,对环境的稳定性较高。然而,以前努力获得大型CSPBBR3单晶,使用低温溶液方法达到令人满意的质量达到了有限的结果。在这项工作中,我们研究了使用抗溶剂蒸气辅助结晶(AVC)方法的CSPBBR3晶体的生长。通过调整PBBR2和CSBR的摩尔比,获取最终产品的相图。确定了五个区域,包括CS4PBBR6单相区域,CS4PBBR6和CSPBBR3两个阶段区域,CSPBBR3单相区域,CSPBBR3和PBBR2中心点2 [(CH3)(2)SO]亚稳态两个阶段区域,以及CSPBBR3和PBBR2中心点2 [(CH3)(2)所以]两个阶段区域。采用三种方法来提高CSPBBR3的尺寸和晶体质量。使用DMSO稀释抗溶剂MeOH溶液以降低MeOH蒸气压力,有效地定制了生长速率。已经获得了厘米尺寸的明亮CSPBBR3晶体。 CSPBBR3的室温带隙估计与透射光谱类似于2.29eV。光致发光光谱分别显示出在530和555nm处的两个强发射峰,其与游离和粘合激子有关。电阻率大至2.1×10(9)ωcm(-3)。霍尔效应测量证明CSPBBR3是p型导电性,具有4.55×10(7)厘米(-3)的空穴载体浓度,均为143cm(2)S(-L)的迁移率。所得到的AU / CSPBBR3 / AU器件对光学光具有很强的光响应,在发光二极管下的两个订单(类似于1mW / cm(2)),波长为365-420nm。我们的研究将更多地阐明CSPBBR3晶体的增长和光响应性质。

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