Piezotronic and Piezophototronic Properties of Orthorhombic ZnSnN2 Fabricated Using Zn-Sn3N4 Composition Spreads through Combinatorial Reactive Sputtering

摘要

This paper presents a combinatorial methodology for fabricating orthorhombic ZnSnN2 (ZTN) by using Zn-Sn3N4 composition spreads. This study is the first to verify the substantial piezotronic and piezophototronic features of ZTN on the basis of asymmetric current-voltage (I-V) characteristics. Regarding the piezophototronic effect, at a -5 V bias, the current density was enhanced up to 2.5 times when the applied pressure increased from 0.625 to 2.5 GPa. Schottky barrier height variations at Si and S2 were calculated under a pressure of 2.5 GPa and were observed to have increased and decreased by approximately 1.0 and 22 mV, respectively. The results clarified the I-V behavior and also supported the proposed energy-band structure evolution of piezotronic and piezophototronic ZTN. In addition, ZTN formation was verified through X-ray photoelectron spectroscopy and X-ray diffraction. A deconvolution algorithm was employed to validate the ratio of orthorhombic ZTN (Pna2(1)) (approximately 30%). In addition, UV-vis spectrometry revealed that the energy bandgap of ZTN was approximately 2.0 eV.