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N-graphdiyne two-dimensional nanomaterials: Semiconductors with low thermal conductivity and high stretchability

机译:n-graphdiyne二维纳米材料:具有低导热性和高拉伸性的半导体

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Most recently, N-graphdiyne two-dimensional (2D) nanomaterials were successfully experimentally realized at the gas/liquid and liquid/liquid interfaces. We accordingly conducted density functional theory (DFT) and molecular dynamics simulations to explore the mechanical/failure, thermal conductivity and stability, electronic and optical properties of three N-graphdiyne nanomembranes. Our DFT results of uniaxial tensile simulations reveal that these monolayers can yield remarkably high stretchability or tensile strength depending on the atomic structure and loading direction. Studied N-graphdiyne nanomembranes were found to exhibit semiconducting electronic character, with band-gap values ranging from 0.98 eV to 3.33 eV, based on the HSE06 estimations. The first absorption peak suggests that these 2D structures can absorb visible, IR and NIR light. Ab initio molecular dynamics results reveal that N-graphdiyne 2D structures can withstand at high temperatures, like 2000 K. Thermal conductivities of suspended single-layer N-graphdiyne sheets were predicted to be almost temperature independent and about three orders of magnitude smaller than that of the graphene. The comprehensive insight provided by this work highlights the outstanding physics of N-graphdiyne 2D nanomaterials, and suggest them as highly promising candidates for the design of novel stretchable nanodevices. (c) 2018 Elsevier Ltd. All rights reserved.
机译:最近,在气/液和液体/液体界面上成功地实验地实现了N-Graphdiyne二维(2D)纳米材料。因此,我们进行了密度泛函理论(DFT)和分子动力学模拟,以探索机械/破坏,导热性和稳定性,电子和光学性质的三个n-graphdiyne nanomembranes。我们的单轴拉伸模拟的DFT结果表明,这些单层可以根据原子结构和装载方向产生显着高的可拉伸性或拉伸强度。研究了N-Graphdiyne Nanomembranes展示了半导体电子特性,基于HSE06估计,带间隙值范围为0.98eV至3.33eV。第一吸收峰表明这些2D结构可以吸收可见的IR和NIR光。 AB Initio分子动力学结果表明,N-Graphdiyne 2D结构可以承受高温,如2000 K.悬浮的单层N-Graphdiyne板的热导体预测几乎温度独立,大约三个数量级小于石墨烯。这项工作提供的全面洞察力突出了N-Graphdiyne 2D纳米材料的出色物理,并建议他们对新型可拉伸纳米型设计的设计非常有希望的候选人。 (c)2018年elestvier有限公司保留所有权利。

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