...
首页> 外文期刊>Chemical Engineering Science >DFT insights into the direct desulfurization pathways of DBT and 4,6-DMDBT catalyzed by Co-promoted and Ni-promoted MoS2 corner sites
【24h】

DFT insights into the direct desulfurization pathways of DBT and 4,6-DMDBT catalyzed by Co-promoted and Ni-promoted MoS2 corner sites

机译:DFT深入了解DBT和4,6-DMDBT的直接脱硫途径,通过共同促进和Ni促进的MOS2角部位催化

获取原文
获取原文并翻译 | 示例
           

摘要

The direct desulfurization (DDS) mechanisms of DBT and 4,6-DMDBT over the different Co-promoted and Ni-promoted MoS2 corner sites were systematically investigated using DFT calculations. Innovatively, the adsorption processes of both sulfur-containing compounds were evaluated by dispersion corrected methods (DFT-D) firstly. After that, the effect of corner vacancy on the direct desulfurization mechanism was discussed in detail. And the results showed that single corner vacancy provided sufficient support for the DDS reaction of DBT, while double corner vacancies revealed necessary for the adsorption and subsequent C-S bond scission of 4,6-DMDBT. However, based on the DFT calculations, the formation energy of the double vacancies was relatively high, which was considered to be present at a very low possibility under the hydrodesulfurization (HDS) condition, thus the DDS activity of 4,6-DMDBT was relatively low. Compared to CoMoS, it could also be found that the corner vacancy of NiMoS showed more superiorities, not only in the contributions to the C-S bond cleavages of DBT and 4,6-DMDBT but also in the generation and regeneration processes of active sites. Consequently, the barriers of C-S bond cleavages over NiMoS corner sites were as low as 1.16 and 1.22 eV for DBT and 4,6-DMDBT, respectively. Furthermore, the formation energy of the single corner vacancy over NiMoS was 0.78 eV. The relative DFT researches provided atomic-scale insights into the catalytic cycle and the role of corner vacancy in the HDS reaction on Co/Ni-promoted catalysts, which were of significance for the design of highly active Mo-based HDS catalysts. (C) 2019 Elsevier Ltd. All rights reserved.
机译:使用DFT计算系统地研究了DBT和4,6-DMDBT的直接脱硫(DDS)机制通过不同的共同促进和Ni促进的MOS2角部位进行了系统地研究。创新性地,通过首先通过分散校正的方法(DFT-D)评估含硫化合物的吸附过程。之后,详细讨论了角空位对直接脱硫机制的影响。结果表明,单个角空位为DDS的DDS反应提供了足够的载体,而DAS的吸附和随后的4,6-DMDBT的C-S粘合裂变所需的双角空位。然而,基于DFT计算,双重空位的形成能量相对较高,这被认为是在加氢脱硫(HDS)条件下的非常低的可能性下存在,因此4,6-DMDBT的DDS活性相对低的。与COMOS相比,也可以发现NIMOS的角落空位显示出更多的优势,不仅在对DBT和4,6-DMDBT的C-S键切割的贡献中,而且在活性位点的产生和再生过程中。因此,对于DBT和4,6-DMDBT,NiMOS角部位点上的C-S键切割的屏障分别低至1.16和1.22eV。此外,NiMOS上单角空位的形成能量为0.78eV。相对DFT研究向催化循环和角角空位在CO / Ni促进催化剂上的角落空位中的作用提供了原子学的洞察,这对于高活性MO基HDS催化剂的设计具有重要性。 (c)2019年elestvier有限公司保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号