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首页> 外文期刊>Chemical engineering journal >Rational design of few-layered ReS2 nanosheets/N-doped mesoporous carbon nanocomposites for high-performance pseudocapacitive lithium storage
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Rational design of few-layered ReS2 nanosheets/N-doped mesoporous carbon nanocomposites for high-performance pseudocapacitive lithium storage

机译:用于高性能假偶锂储存的少数层res2纳米片/ n掺杂介孔碳纳米复合材料的合理设计

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A chemical vapor deposition-based two-step nanocasting process is employed to fabricate two different types of few-Layered ReS2 nanosheets/N-doped ordered mesoporous carbon CMK-3 nanocomposites: the ReS2 na-nosheets are either confined within the channels of the N-doped CMK-3 or supported on the outside of the N-doped CMK-3. Siginificantly, the ReS2 nanosheets within the channels of N-doped CMK-3 delivers a much higher reversible capacity of 1175 mAhg~(-1) than does the ReS2 nanosheets on the external surface of N-doped CMK-3 (719mAhg~(-1)), and the superiority of the ReS2 nanosheets within the channels of N-doped CMK-3 is well demonstrated over the ReS2 nanosheets on the external surface of N-doped CMK-3, te., in terms of specific surface area, structural stability, lithium-ion and electron transport kinetics, capacrtive charge storage, and the resulting high-performance lithium storage. This work clearly demonstrates the advantage of the few layered ReS2 within the channels of N-doped CMK-3 than on the external surface of N-doped CMK-3 as an anode material in lithium-ion batteries, and meanwhile provides new insight into the rational design of the transition metal dichalcogenides/porous carbon nanocomposites for electrochemical energy storage.
机译:使用化学气相沉积的两步纳米纳米纳米型工艺来制造两种不同类型的少量层次的RES2纳米晶片/ N掺杂有序的介孔碳CMK-3纳米复合材料:RES2 NA-NOSHEETS被限制在N的通道内 - 掺杂CMK-3或支撑在N掺杂CMK-3的外部。麻痹,N-掺杂CMK-3通道内的RES2纳米片提供了比N-DOPED CMK-3外表面上的RES2纳米片(719MAHG〜( - 1)),N掺杂CMK-3通道内的RES2纳米片的优越性在N-DOPED CMK-3,TE的外表面上的RES2纳米晶片上良好地说明了。,就特定表面积而言,结构稳定性,锂离子和电子传输动力学,电容电荷储存和所得高性能锂储存。这项工作清楚地证明了N掺杂CMK-3通道内的少量分层RES2的优点而不是在N掺杂CMK-3的外表面上作为锂离子电池中的阳极材料,并且同时提供新的洞察过渡金属二均甲基化物/多孔碳纳米复合材料的理性设计,用于电化学能量储存。

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