Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device

摘要

The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (ARAM). In our work, the g-C3N4 powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C3N4/FTO structure was prepared using drop-coated g-C3N4 powder to form a film onto FTO. It can be observed that the as prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to similar to 52) and good reliability under applied voltage window of 4.0 V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior.