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High temperature oxidation behavior of ZrB2-SiC added MoSi2 ceramics

机译:ZRB2-SIC添加MOSI2陶瓷的高温氧化行为

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摘要

In this paper, MoSi2, MoSi2-20 vol% (ZrB2-20 vol% SiC) and MoSi2-40 vol% (ZrB2-20 vol% SiC) ceramics were prepared using pressureless sintering. The oxidation behaviors of these MoSi2-(ZrB2-SiC) ceramics were investigated at 1600 degrees C for different soaking time of 60, 180 and 300 min, respectively. The oxidation behaviors of the MoSi2-(ZrB2-SiC) ceramics were studied through weight change test, oxide layer thickness measurement, and microstructure analysis. Further investigation of the oxidation behaviors of the MoSi2-(ZrB2-SiC) ceramics was conducted at a higher temperature of 1800 degrees C for 10 min. The microstructure evolution of the ceramics was also analyzed. It was finally found that the oxidation resistance of MoSi2 was improved by adding ZrB2-SiC additives, and the MoSi2-20 vol% (ZrB2-20 vol% SiC) ceramic exhibited the optimal oxidation resistance behavior at elevated temperatures. From this study, it is believe that it can give some fundamental understanding and promote the engineering application of MoSi2-based ceramics at high temperatures.
机译:在本文中,使用无压烧结制备MOSI2,MOSI2-20 Vol%(ZRB2-20 Vol%SiC)和MOSI2-40 Vol%(ZRB2-20 Vol%SiC)陶瓷。在1600℃下研究了这些MOSI2-(ZRB2-SIC)陶瓷的氧化行为,分别为60,180-300分钟的不同浸泡时间。通过重量变化试验,氧化物层厚度测量和微观结构分析研究了MOSI2-(ZRB2-SIC)陶瓷的氧化行为。进一步研究MOSI2-(ZRB2-SIC)陶瓷的氧化行为在1800℃的较高温度下进行10分钟。还分析了陶瓷的微观结构演化。最后发现通过添加ZRB2-SiC添加剂来改善MOSI2的抗氧化性,并且MOSI2-20体积%(ZRB2-20 Vol%SiC)陶瓷在升高的温度下表现出最佳的抗氧化性性能。从这项研究中,它认为它可以在高温下提供一些基础的理解和促进MOSI2陶瓷的工程应用。

著录项

  • 来源
    《CERAMICS INTERNATIONAL 》 |2018年第17期| 共7页
  • 作者单位

    Beijing Inst Technol Inst Adv Struct Technol Beijing 100081 Peoples R China;

    Beijing Inst Technol Inst Adv Struct Technol Beijing 100081 Peoples R China;

    Beijing Inst Technol Inst Adv Struct Technol Beijing 100081 Peoples R China;

    Beijing Inst Technol Inst Adv Struct Technol Beijing 100081 Peoples R China;

    Second Mil Med Univ Changzheng Hosp Peoples Liberat Army Inst Neurosurg Shanghai Inst Neurosurg Dept Neurosurg Shanghai 200003 Peoples R China;

    Beijing Inst Technol Inst Adv Struct Technol Beijing 100081 Peoples R China;

    Beijing Inst Technol Inst Adv Struct Technol Beijing 100081 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 陶瓷工业 ; 硅酸盐工业 ;
  • 关键词

    MoSi2; Oxidation; Microstructure;

    机译:MOSI2;氧化;微观结构;

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