首页> 外文期刊>Analog Integrated Circuits and Signal Processing >A transconductance boosted CMOS current differencing transconductance amplifier (TBCDTA) and its application
【24h】

A transconductance boosted CMOS current differencing transconductance amplifier (TBCDTA) and its application

机译:跨导升压型CMOS电流差动跨导放大器(TBCDTA)及其应用

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents a transconductance (g(m)) boosted CMOS current differencing transconductance amplifier (TBCDTA). The transconductance amplifier of CDTA has been modified in TBCDTA, which results in higher and wide range of transconductance with power dissipation lying in the same range as that of existing CDTA. It has been observed that the transconductance (g(m)) of CDTA is varied by changing the biasing current I-B which leads to higher power dissipation and limited range of transconductance. In the proposed TBCDTA, the biasing current I-B is kept constant and transconductance has been boosted by connecting 'N' number of MOSFETs in parallel in place of conventional MOSFETs of differential pair and current mirror structures. The workability of the proposed TBCDTA has been verified by using Mentor Graphics Eldo simulation tool with TSMC CMOS 0.18 A mu m process parameters. A new resistorless third order voltage/current mode quadrature sinusoidal oscillator has been designed. The KHN filter designed by proposed TBCDTA gives better performance than the KHN filter designed by an existing CDTA.
机译:本文介绍了一种跨导(g(m))增强型CMOS电流差动跨导放大器(TBCDTA)。 CDTA的跨导放大器已在TBCDTA中进行了修改,从而导致跨导范围更大,范围更广,功耗与现有CDTA的范围相同。已经观察到,通过改变偏置电流I-B来改变CDTA的跨导(g(m)),这导致更高的功率消耗和有限的跨导范围。在建议的TBCDTA中,偏置电流I-B保持恒定,并且通过并联连接“ N”个MOSFET来代替差动对和电流镜结构的传统MOSFET,从而提高了跨导。所建议的TBCDTA的可操作性已通过使用Mentor Graphics Eldo仿真工具和TSMC CMOS 0.18 Aμm工艺参数进行了验证。设计了一种新型的无电阻三阶电压/电流模式正交正弦振荡器。提议的TBCDTA设计的KHN滤波器比现有CDTA设计的KHN滤波器具有更好的性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号