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首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (triangular voltage sweep) method
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Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (triangular voltage sweep) method

机译:使用TVS(三角形电压扫描)方法计算Si上铁电薄膜的极化和移动电荷密度

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The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This TVS method yield a polarizable and an ionic displacement current peaks whose areas are proportional to the total polarization reversal charge and the total mobile ionic space charge, respectively. The calculated polarization and the mobile charge density TVS measured at 250°C were 0.42 μC/cm{sup}2 and 5.5×10{sup}11 mobile ions/cm{sup}2 in the SBT film of MFIS structure, and 1.4 μC/cm{sup}2 in the LiNbO{sub}3 film of MFS structure, respectively.
机译:已经提出了检测技术,偏振和移动电荷密度同时使用TVS方法在SI上的铁电膜中。 该TVS方法产生可极化的和离子位移电流峰值,其区域分别与总极化反转电荷和总移动离子空间电荷成比例。 计算的偏振和在250℃下测量的移动电荷密度TV在MFIS结构的SBT薄膜中测量为0.42μc/ cm {sup} 2和5.5×10 {sup} 11移动离子/ cm {sup} 2,以及1.4μc / cm {sup} 2在LINBO {SUB} 3的MFS结构膜中。

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