Spin-orbit torque induced switching using antiferromagnets and its application to artificial neural networks

摘要

Spin-orbit torque (SOT) induced switching, a magnetization switching technique utilizing spin-orbit interactions in heterostructures with broken space inversion symmetry, offers attractive avenues for high-performance and low-power integrated circuits [1-3]. While the heterostructure considered, in general, consists of a bilayer with a non-magnet (NM), e.g., Pt, Ta, and W, and a ferromagnet (FM), we here show that replacing the NM by an antiferromagnet (AFM) opens up various opportunities beyond the conventional integrated circuits [4-6].