Determination of the effective mass and nanoscale electrical transport in La-doped BaSnO3 thin films

摘要

Epitaxial La-doped BaSnO3 thin films were grown by radio-frequency (RF) magnetron sputtering technique on (LaAlO3)(0.3)(SrAl0.5Ta0.5O3)(0.7) (001) substrates. The n-type degenerate semiconductor was demonstrated in the La-doped BaSnO3 thin film from Hall-effect measurement, and its electron effective mass similar to 0.396m(0) (m(0), the free electron mass) was determined from combined Seebeck coefficient and carrier density. Additionally, the local current-voltage curve measured using conductive atomic force microscopy exhibits non-linear characteristic and the transport mechanism at high bias is found to be the Fowler-Nordheim tunneling. (C) 2015 Elsevier B.V. All rights reserved.